News Release
News Release: Sep.03, 2010
The industry's lowest operating voltage*1 :0.9V
MOSFET for Mobile Electronic Devices
| Product Name | MOSFET operating at very low voltage |
|---|---|
| Product Number | 14 models including MCH3383, MCH3484 & etc. |
| Sample shipment | From September 2010 |
| Production Plan | 30million PCS/Month from October 2010 |
SANYO Semiconductor Co., Ltd. launched 14 models of MOSFET that operate at very low voltage. Samples are available from September 2010, and mass production will start from October.
MOSFET used in battery-driven devices are required to have small size, low on-resistance and very low operating voltage.
Therefore, SANYO Semiconductor developed the below products by adopting original technologies:
MOSFET operating at 0.9V (both Pch and Nch, Pch operating at 0.9V is the first in the industry):
Rated VGS= 5V.
MOSFET operating at 1.2V: VGS=9V (equivalent to that of conventional models),
Operating Range=1.2V to 9V.
In addition, this series are environmentally-considered. They do not contain any Pb or halogen.
SANYO Semiconductor continues to provide semiconductor solutions for realizing human's comfortable life and the earth's green environment.
Features
- The industry's first Pch 0.9V operation: low power consumption.
- 14 models lineup: supports wide range (0.9V to 9V) power supplies like LiB and dry cells.
- Drivable directly from microcomputer: step-up circuit can be eliminated, few parts count.
*1 as of September 2010
Overview
In mobile devices such as cell phone and digital still cameras, decrease in internal circuit loss is made progressively for reducing power consumption and achieving long driving time. MOSFETs used in these devices are required to have low on-resistance. SANYO Semiconductor has been supplying low on-resistance MOSFETs so far in battery switch and DC-DC converter applications, and has achieved considerably high confidence and appreciation in the market. Besides, with the advancement of these mobile devices, further power consumption reduction is demanded and low operating voltage of the MOSFET becomes important. In the past, MOSFET usually fail to operate when gate voltage is low, or in some cases even the MOSFET operated, on-resistance would become high.
In addition, because Electromotive Force of dry cells and nickel hydride rechargeable batteries is 1.2V, which is unable to drive directly the MOSFET (operating voltage 1.5V or 1.8V), a step-up circuit has been needed. However, this new MOSFET series achieved low operating voltage and low on-resistance, thus can be directly driven from dry cells and nickel hydride rechargeable batteries.
To have MOSFET operate at low voltage, it is necessary to decrease its gate threshold voltage. But decrease in this threshold voltage may cause increase in Drain-Source leak current. To suppress this leak current, SANYO Semiconductor developed low-voltage process based on generation-4 trench process (T4) and realized 0.9V and 1.2V operation.
Pch MOSFET can operate from the potential difference between supply voltage and GND, so its circuit can be composed of few parts. It is often used as the power supply switch of the mobile devices. Yet for Nch MOSFET, since its gate voltage needs to be higher than supply voltage, drive circuit is somewhat complicate. Generally, Nch is superior in on-resistance, so you can choose Nch depending on usage.
*2 Gate threshold voltage is defined as the voltage occurred when it begins to energize between Drain and Source after certain voltage is applied on the gate.
Features
- The industry's first Pch 0.9V operation: low power consumption.
To control the increase of Drain-Source leak current, SANYO Semiconductor developed low-voltage process by adopting new-structured gate oxide film and new gate-protection diode, and achieved:
Pch MOSFET: VGS=0.9V, RDS(on)=250mΩ (typ.)
Nch MOSFET: VGS=0.9V, RDS(on)=165mΩ (typ.).
Each product can be used for the mobile devices that need a maximum current of 1A to 2A. - 14 models lineup: supports wide range (0.9V to 9V) power supplies like LiB and dry cells.
0.9V type, with the maximum applied voltage*3 of 5V, can be used for the switch of 1-cell lithium ion batteries (max. 4.2V), dry cells and nickel hydride batteries.
1.2V type can be used for 2-cells lithium ion batteries (maximum voltage applied: 9V).
The feature of this MOSFET series is that change in characteristics is small regardless of the variation in supply voltage. So it will contribute to long battery life and stable operation of the mobile devices.
We supply 2 models of 0.9V type and 12 models of 1.2V type in 4 kinds of small-sized and high-power packages including FlipChip type.
You can choose the optimal 1.2V products to match your needs, such as single type for load switch, or dual type for charging/discharging switch. We assure each product shares the industry's highest-level on-resistance.
*3: the maximum applied voltage that can be applied between Gate and Source - Drivable directly from microcomputer: step-up circuit can be eliminated, few parts count.
With the realization of 0.9V MOSFET, parts count can be reduced.
Moreover, this MOSFET series can also be used for the region where only bipolar transistor could be used so far, so driving loss can also be reduced.
Specifications
0.9V drive
| Model | Polarity | VDSS (V) |
VGSS (V) |
ID (A) |
RDSon(2.5V) typ./max.(mΩ) |
RDSon(1.2V) typ./max.(mΩ) |
RDSon(0.9V) typ./max.(mΩ) |
Size (mm) |
|---|---|---|---|---|---|---|---|---|
| MCH3383 | Pch | -12 | ±5 | -3.5 | 56/68 | 115/173 | 250/500 | 2.0×2.1 |
| MCH3484 | Nch | 20 | ±5 | 4.5 | 33/40 | 79/119 | 165/330 | 2.0×2.1 |
1.2V drive: Pch
| Model | Polarity | VDSS (V) |
VGSS (V) |
ID (A) |
RDSon(4.5V) typ./max.(mΩ) |
RDSon(2.5V) typ./max.(mΩ) |
RDSon(1.2V) typ./max.(mΩ) |
Size (mm) |
|---|---|---|---|---|---|---|---|---|
| SCH1341 | Pch | -12 | ±9 | -3 | 67/81 | 95/114 | 300/600 | 1.6×1.6 |
| MCH3382 | Pch | -12 | ±9 | -2 | 152/183 | 212/255 | 520/1040 | 2.0×2.1 |
| MCH6349 | Pch | -12 | ±9 | -6 | 26/32 | 32/39 | 145/290 | 2.0×2.1 |
| EFC4306 | Pch | -12 | ±9 | -3.5 | 50/60 | 65/78 | 200/400 | 1.0×1.4 |
| EMH2316 Dual |
Pch | -12 | ±9 | -3.5 | 65/78 | 93/112 | 300/600 | 2.0×2.1 |
| ECH8685 Dual |
Pch | -12 | ±9 | -7 | 19/23 | 23/28 | 100/200 | 2.8×2.9 |
1.2V drive: Nch
| Model | Polarity | VDSS (V) |
VGSS (V) |
ID (A) |
RDSon(4.5V) typ./max.(mΩ) |
RDSon(2.5V) typ./max.(mΩ) |
RDSon(1.2V) typ./max.(mΩ) |
Size (mm) |
|---|---|---|---|---|---|---|---|---|
| SCH1440 | Nch | 20 | ±9 | 4 | 37/45 | 47/57 | 120/240 | 1.6×1.6 |
| MCH3481 | Nch | 20 | ±9 | 2 | 80/96 | 105/126 | 260/520 | 2.0×2.1 |
| MCH6448 | Nch | 20 | ±9 | 8 | 17/21 | 20/25 | 55/110 | 2.0×2.1 |
| EFC4405 | Nch | 20 | ±9 | 5.5 | 23/28 | 28/34 | 80/160 | 1.0×1.4 |
| EMH2415 Dual |
Nch | 20 | ±9 | 4.5 | 32/39 | 42/51 | 95/190 | 2.0×2.1 |
| ECH8684 Dual |
Nch | 20 | ±9 | 8 | 12/15 | 15/18 | 33/66 | 2.8×2.9 |
Example of Application
*The information presented in this press release, including device specifications, is current as of the date of this press release.
Note, however, that this information is subject to change without notice and thus at later dates the current state may differ in certain details from the content presented here.
